Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Amorphous semiconductor material
Patent
1995-01-03
1996-10-22
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Amorphous semiconductor material
257 66, 257379, 257380, 257536, H01L 2904
Patent
active
055679579
ABSTRACT:
Resistance layer structures comprised of a plurality of conductive charge storage nodes, collection electrodes, and an electrically controllable resistance element which connects the storage nodes and the collection electrodes. The resistance of the electrically controllable resistance element can be switched between a low impedance, so as to permit a rapid charge interchange between the various storage nodes and the collection electrodes, and a high impedance, so as to permit an integration of charge onto the storage nodes. Beneficially, the electrically controllable resistance element is implemented as the active region of a metal-insulator-semiconductor device.
Biegelsen David
Jackson Warren B.
Weisfield Richard L.
Prenty Mark V.
Xerox Corporation
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