Segmented gate drive for dynamic beam shape correction in...

Electric lamp and discharge devices: systems – Discharge device load with fluent material supply to the... – Electron or ion source

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C315S169300, C313S306000, C313S309000, C313S351000

Reexamination Certificate

active

06429596

ABSTRACT:

BACKGROUND OF THE INVENTION
1. Field of the Invention
This invention pertains to electron guns for devices such as cathode ray tubes (CRTs). More particularly, it relates to improved field emission arrays having integral electrodes.
2. Description of Related Art
A cathode ray tube (CRT) and any other device requiring an electron beam normally contains a hot filament to cause thermionic emission from a cathode. There has long been an interest in developing cold cathodes, depending on field emission of electrons, to replace hot cathodes. For low current devices, such as scanning electron microscopes, there are a large number of patents describing field emission electron guns. There are also a large number of patents for field emission flat panel displays where the field emitter has a low duty cycle. For higher current applications, such as TV displays, prior art field emission cathodes, generally based on molybdenum and silicon, have not proven sufficiently robust for commercial applications. Tip damage occurs from ion back scattering caused by the presence of background gases and the tips fail when driven at high current densities.
It has been demonstrated that carbon-based microtip cathodes can be fabricated and used as a replacement for molybdenum- or silicon-based microtip field emission cathodes. It has also been demonstrated that the diamond can be monolithically integrated with gated electrodes in a self-aligned structure, using integrated circuit fabrication techniques (“Advanced CVD Diamond Microtip Devices for Extreme Applications,” Mat. Res. Soc. Symp. Proc., Vol. 509 (1998)).
Much of the work in field emission cathode development was directed to electron sources for use in flat panel displays. U.S. Pat. No. 3,753,022 discloses a miniature directed electron beam source with several deposited layers of insulator and conductor for focusing and deflecting the electron beam. The deposited layers have a column etched through to the point field emission source. The device is fabricated by material deposition techniques. U.S. Pat. No. 4,178,531 discloses a cathode ray tube having a field emission cathode. The cathode comprises a plurality of spaced, pointed protuberances, each protuberance having its own field emission-producing electrode. Focusing electrodes are used to produce a beam. The structure produces a plurality of modulated beams that are projected as a bundle in substantially parallel paths to be focused on and scanned over the screen of a CRT. Manufacture using a photoresist or thermal resist layer is disclosed. U.S. Pat. No. 5,430,347 discloses a cold cathode field emission device having an electrostatic lens as an integral part of the device. The electrostatic lens has an aperture differing in size from the first aperture of the gate electrode. The electrostatic lens system is said to provide an electron beam cross section such that a pixel size of from approximately 2 to 25 microns may be employed. Computer model representations of the side elevation view of prior art electron emitters are shown.
U.S. Pat. No. 5,786,657 proposes a method to minimize the nonuniform influence of surrounding electric potential on an electron beam from field emitters. A hole in the emitting surface and electrodes with suitable potentials are used to minimize beam distortion. A recent paper discusses the use of field emitter electron guns in a CRT. (“Field-Emitter Array Cathode-Ray Tube,” SID 99 Digest, pp. 1150-1153, 1999) The paper discusses means for decreasing beam diameters by making smaller diameter gates and other adjustments. Also, the problem of limited pixel definition at the periphery of an ellipse-shaped beam is discussed and fabrication and use of segmented or divided focus electrodes to improve beam focus is described.
Space charge, beam deflection, beam size and position, and other factors influence the shape of the beam when a beam passes through electron optics and is focused onto an object. The shape of the beam may also vary with the angle of deflection when the beam is magnetically or electrostatically deflected. Improvement in dynamic beam-shaping methods and apparatus will provide added value for field emitter arrays for use in CRTs or other devices. The dynamic beam shaping method should be widely adaptable to a variety of conditions where the final beam-shape needs improvement, such as when an electron beam is deflected by a magnetic field. The dynamic beam shaping method should allow for the continued adjustment at different deflection angles of the beam.
BRIEF SUMMARY OF THE INVENTION
Apparatus and method are provided for dynamically adjusting the emitted beam shape from a field emission cathode having a gate electrode. The cathode emitter may be carbon-based, but other emitter materials may be used. The gate electrode in an array of field emission sources is independently controlled for each emitter or group of emitters in different areas of the array. Control of voltage on the gate electrode allows emission to be turned off and on or to be adjusted in intensity from different areas. This control allows for dynamic correction of aberrations in the beam by adjusting the emission area and shape in the emitted beam from the cathode array. Control voltages may be supplied from drive circuitry that may be controlled by a microcontroller.


REFERENCES:
patent: 3753022 (1973-08-01), Fraser, Jr.
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 4178531 (1979-12-01), Alig
patent: 4857799 (1989-08-01), Spindt et al.
patent: 5363021 (1994-11-01), MacDonald
patent: 5430347 (1995-07-01), Kane et al.
patent: 5619097 (1997-04-01), Jones
patent: 5682078 (1997-10-01), Shishido
patent: 5719477 (1998-02-01), Tomihari
patent: 5786657 (1998-07-01), Okamoto
patent: 5786669 (1998-07-01), Kobori et al.
patent: 5798604 (1998-08-01), Duboc, Jr. et al.
patent: 5814931 (1998-09-01), Makishima
patent: 5869924 (1999-02-01), Kim
patent: 5898262 (1999-04-01), Kim et al.
patent: 5905332 (1999-05-01), Yun et al.
patent: 5942849 (1999-08-01), Cade
patent: 5977719 (1999-11-01), Makishima
patent: 6075315 (2000-06-01), Seko et al.
patent: 6181055 (2001-01-01), Patterson et al.
patent: 6255768 (2001-07-01), Gorski et al.
patent: 0 479 425 (1992-04-01), None
patent: 0 497 627 (1992-08-01), None
patent: 0 833 359 (1998-04-01), None
patent: 09306376 (1997-11-01), None
patent: WO94/15350 (1994-07-01), None
patent: WO99/39361 (1999-08-01), None
K. Konuma, et al. “Field-Emitter Array Cathode-Ray Tube (FEA-CRT)”SID 99 Digest (1999)pp. 1150-1153.
D. E. Patterson, “Advanced CVD Diamond Microtip Devices for Extreme Applications”, Mat. Res. Soc. Symp. Proc. voi. 509 (1998) pp. 65-75.
U.S. patent application Ser. No. 09/168,908, Patterson et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Segmented gate drive for dynamic beam shape correction in... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Segmented gate drive for dynamic beam shape correction in..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Segmented gate drive for dynamic beam shape correction in... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-2906466

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.