Segmented cascode HBT for microwave-frequency power amplifiers

Details Segmented cascode HBT for microwave-frequency power amplifiers Segmented cascode HBT for microwave-frequency power amplifiers

1990-06-26

1991-11-19

LaRoche, Eugene R.

Amplifiers

With semiconductor amplifying device

Including plural stages cascaded

330286, 330295, 330124R, H03F 304

Patent

active

050669265

ABSTRACT:
A cascode transistor configuration includes an input terminal for receiving the input signal, an output terminal for outputting the output signal and bass and emitter terminals connectable to ground. Each of a predetermined plurality of common-base heterojunction bipolar transistors (HBTs) has a base coupled to the base terminal, and a collector coupled to the support output terminal. Each of the predetermined plurality of common-emitter HBTs is associated with one of the common-base HBTs. Each common-emitter HBT also has a base coupled to the input terminal, an emitter coupled to the emitter terminal, and a collector coupled to only the emitter of the associated common-base HBT.

REFERENCES:
patent: 4667166 (1987-05-01), Itoh
patent: 4728902 (1988-03-01), Gleason
patent: 5001534 (1991-03-01), Lumardi

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