Seed layer processes for MOCVD of ferroelectric thin films...

Details Seed layer processes for MOCVD of ferroelectric thin films... Seed layer processes for MOCVD of ferroelectric thin films...

2006-12-26

2006-12-26

Schillinger, Laura M. (Department: 2813)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S240000, C438S785000

Reexamination Certificate

active

07153708

ABSTRACT:
A method of forming a ferroelectric thin film on a high-k layer includes preparing a silicon substrate; forming a high-k layer on the substrate; depositing a seed layer of ferroelectric material at a relatively high temperature on the high-k layer; depositing a top layer of ferroelectric material on the seed layer at a relatively low temperature; and annealing the substrate, the high-k layer and the ferroelectric layers to form a ferroelectric thin film.

REFERENCES:
patent: 6190925 (2001-02-01), Li et al.
patent: 6229166 (2001-05-01), Kim et al.
patent: 6281022 (2001-08-01), Li et al.
patent: 6303502 (2001-10-01), Hsu et al.
patent: 6340600 (2002-01-01), Joo et al.
patent: 6372034 (2002-04-01), Zhuang et al.
patent: 6410343 (2002-06-01), Li et al.
patent: 6410346 (2002-06-01), Li et al.
patent: 6441417 (2002-08-01), Zhang et al.
patent: 6465261 (2002-10-01), Kang
patent: 6475813 (2002-11-01), Li et al.
patent: 6483137 (2002-11-01), Li et al.
patent: 6495378 (2002-12-01), Li et al.
patent: 6503314 (2003-01-01), Li et al.
patent: 6503763 (2003-01-01), Li et al.
patent: 6531324 (2003-03-01), Hsu et al.
patent: 6537361 (2003-03-01), Zhuang et al.
patent: 6585821 (2003-07-01), Zhuang et al.
patent: 6590243 (2003-07-01), Li et al.
patent: 6602720 (2003-08-01), Hsu et al.
patent: 6616857 (2003-09-01), Li et al.
patent: 6664116 (2003-12-01), Li et al.
patent: 6728093 (2004-04-01), Fox
patent: 6737693 (2004-05-01), Li et al.
patent: 6794198 (2004-09-01), Li et al.
patent: 6825519 (2004-11-01), Li et al.
patent: 6855974 (2005-02-01), Matsuura et al.
patent: 6897074 (2005-05-01), Zhang et al.
patent: 6906366 (2005-06-01), Hsu et al.
patent: 7008801 (2006-03-01), Li et al.
patent: 7009231 (2006-03-01), Zhang et al.
patent: 2002/0139955 (2002-10-01), Zhuang et al.
patent: 2002/0142487 (2002-10-01), Li et al.
patent: 2002/0177244 (2002-11-01), Hsu et al.
patent: 2003/0027360 (2003-02-01), Hsu et al.
patent: 2003/0068848 (2003-04-01), Hsu et al.
patent: 2003/0082909 (2003-05-01), Li et al.
patent: 2003/0108670 (2003-06-01), Zhuang et al.
patent: 2003/0109069 (2003-06-01), Li et al.
patent: 2003/0205742 (2003-11-01), Hsu et al.
patent: 2003/0207473 (2003-11-01), Li et al.
patent: 2004/0188743 (2004-09-01), Li et al.
patent: 2005/0069643 (2005-03-01), Li et al.
patent: 2005/0178656 (2005-08-01), Li et al.
patent: 2005/0196878 (2005-09-01), Zhang et al.
patent: 2006/0035390 (2006-02-01), Li et al.

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