Seed layer for reduced resistance tungsten film

Details Seed layer for reduced resistance tungsten film Seed layer for reduced resistance tungsten film

2008-06-30

2010-11-09

Le, Thao P. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Of specified material other than unalloyed aluminum

C257S764000

Reexamination Certificate

active

07830016

ABSTRACT:
Briefly, a memory device comprising a beta phase tungsten seed layer is disclosed.

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patent: 2009/0142925 (2009-06-01), Ha et al.
S. B. Herner, et al., “Fluorine Barrier Properties of Bias-Sputtered Tungsten Films”, Journal of The Electrochemical Society, 147 (5) pp. 1936-1939 (2000).

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