Single-crystal – oriented-crystal – and epitaxy growth processes; – Processes joining independent crystals
Patent
1995-09-21
1997-03-18
Breneman, R. Bruce
Single-crystal, oriented-crystal, and epitaxy growth processes;
Processes joining independent crystals
117 3, 117 4, 117 7, 117 9, 117912, 117937, 502152, C30B 1104
Patent
active
056118546
ABSTRACT:
A method of fabricating bulk superconducting material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta. comprising heating compressed powder oxides and/or carbonates of R and Ba and Cu present in mole ratios to form RBa.sub.2 Cu.sub.3 O.sub.7-.delta. in physical contact with an oxide single crystal seed to a temperature sufficient to form a liquid phase in the RBa.sub.2 Cu.sub.3 O.sub.7-.delta. while maintaining the single crystal seed solid to grow the superconducting material and thereafter cooling to provide a material including RBa.sub.2 Cu.sub.3 O.sub.7-.delta.. R is a rare earth or Y or La and the single crystal seed has a lattice mismatch with RBa.sub.2 Cu.sub.3 O.sub.7-.delta. of less than about 2% at the growth temperature. The starting material may be such that the final product contains a minor amount of R.sub.2 BaCuO.sub.5.
REFERENCES:
patent: 5217944 (1993-06-01), Tournier
Balachandran Uthamalingam
Paulikas Arvydas
Veal Boyd W.
Zhong Wei
Breneman R. Bruce
Garrett Fehisa
The University of Chicago
LandOfFree
Seed crystals with improved properties for melt processing super does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Seed crystals with improved properties for melt processing super, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Seed crystals with improved properties for melt processing super will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1702816