Seed crystals for pulling single crystal silicon

Details Seed crystals for pulling single crystal silicon Seed crystals for pulling single crystal silicon

2005-03-15

2005-03-15

Norton, Nadine G. (Department: 1765)

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

C117S035000, C117S902000, C117S931000, C117S932000

Reexamination Certificate

active

06866713

ABSTRACT:
The present invention provides for a process for preparing a single crystal silicon ingot by the Czochralski method. The process comprises selecting a seed crystal for Czochralski growth wherein the seed crystal comprises vacancy dominated single crystal silicon.

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