Seed crystals for pulling a single crystal and methods using the

Details Seed crystals for pulling a single crystal and methods using the Seed crystals for pulling a single crystal and methods using the

1997-08-28

1999-08-03

Hiteshew, Felisa

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes of growth from liquid or supercritical state

Having pulling during growth

117 35, 117902, 117911, C30B 1536

Patent

active

059320028

ABSTRACT:
In a conventional method for pulling a single crystal, in order to exclude the dislocation induced in contact of a seed crystal with a melt, a neck having a small diameter has been formed. But when a heavy single crystal having a large diameter of 12 inches or so is pulled, it is impossible to hold the single crystal, leading to the falling. When the diameter of the neck is made larger in order to prevent the falling, the dislocation cannot be excluded, leading to the propagation of the dislocation to the single crystal. In the present invention, using a seed crystal having a cylindrical body and a conical front portion, the induction of the dislocation is inhibited by making the temperature of the front portion almost the same as the temperature of the melt when the front portion of the seed crystal is brought into contact with the melt and a single crystal is pulled without forming a neck after melting part of the front portion into the melt.

REFERENCES:
patent: 3135585 (1964-06-01), Dash
patent: 3271118 (1966-09-01), Bhola
patent: 5407907 (1995-04-01), Yamada et al.

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