Seed crystal of silicon single crystal

Details Seed crystal of silicon single crystal Seed crystal of silicon single crystal

1996-04-04

1998-02-03

Loney, Donald

Stock material or miscellaneous articles

Composite

Of silicon containing

428167, 428212, 428409, B32B 904

Patent

active

057142670

ABSTRACT:
Thermal stress at a point portion of a seed crystal generated when the seed crystal is brought into contact with molten silicon liquid is relieved, thereby to prevent generation of dislocation, to curtail the time of a seed contraction process and to surely support a heavy weight single crystal. A seed crystal of a silicon single crystal used when the single crystal is grown from molten silicon liquid by a Czochralski method is formed to show the heat emissivity of 0.5 or higher and lower than 1.0 at the point portion of the seed crystal. The point portion of the seed crystal is either a part or the whole of the portion that makes contact with the molten silicon liquid or a portion that makes contact with the molten silicon liquid and a portion that makes no contact with the molten silicon liquid in the vicinity of that portion. It is desirable to form at least 16 lines per 1 cm.sup.2 of fine grooves each having a width of 0.3 to 1.0 mm on the surface of the point portion of the seed crystal, to form microscopic irregularity on the surface of the point portion by sandblasting the surface of the point portion of the seed crystal, or to form a SiO.sub.2 film on the surface of the point portion by applying oxidizing treatment to the surface of the point portion of the seed crystal.

REFERENCES:
patent: 4515755 (1985-05-01), Matsuo et al.
patent: 5264189 (1993-11-01), Yamashita et al.
patent: 5290395 (1994-03-01), Matsumoto et al.
patent: 5306474 (1994-04-01), Kida et al.

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