Sedimentary deposition of photoresist on semiconductor wafer

Details Sedimentary deposition of photoresist on semiconductor wafer Sedimentary deposition of photoresist on semiconductor wafer

1995-08-16

1998-03-10

Chu, John S.

Coating processes

Electrical product produced

427 96, 427145, 427240, 427336, 427337, 430169, B05D 100, G03F 7022

Patent

active

057259038

ABSTRACT:
A conformal, substantially uniform thickness layer of photoresist is deposited on a semiconductor wafer by causing photoresist solids to "sediment" out of solution or suspension. Generally, the more conformal the layer, the more uniform the reflectance of the layer and the less variation in underlying feature critical dimension (cd). In order to accommodate possible resulting deviations in photoresist layer thickness causing undesirable reflectance nonuniformities (and cd variations), a top antireflective coating may be applied to the photoresist layer. In the case of a point-by-point lithography process, such as e-beam lithography, the thickness/reflectance variations can be mapped, and exposure doses adjusted accordingly.

REFERENCES:
patent: 5039594 (1991-08-01), Durham
patent: 5066561 (1991-11-01), Pampalone
patent: 5215857 (1993-06-01), Hosaka et al.
patent: 5320864 (1994-06-01), Rostoker

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