Secondary measurement of rapid thermal annealer temperature

Details Secondary measurement of rapid thermal annealer temperature Secondary measurement of rapid thermal annealer temperature

1997-01-29

1998-11-03

Walberg, Teresa J.

Electric heating

Heating devices

Combined with container, enclosure, or support for material...

219390, 219405, 219411, 392411, 392416, A21B 100

Patent

active

058312498

ABSTRACT:
A secondary measurement of rapid thermal annealer temperature is provided. The secondary measurement allows a primary temperature measuring device to be monitored for proper operation in real time. A rapid thermal annealer system is provided having a heating chamber configured to receive and anneal a silicon wafer. Several halogen light sources are provided for heating the silicon wafer. An optical pyrometer measures temperature of the silicon wafer as it is heated by the halogen lamps. A thin silicon ring is provided with an s-type thermalcouple attached thereto. The silicon ring is positioned so that its inner edge is aligned closely with an outer edge of the silicon wafer. An s-type amplifier is connected to the s-type thermalcouple wherein the combination generates a signal indicative of the ring temperature. The ring temperature is compared against the wafer temperature as a measured by the pyrometer. If a difference between the ring temperature and wafer temperature exceeds a pre-determined value, the pyrometer is deemed to be malfunctioning and required to be repaired, recalibrated or replaced before future silicon wafers are heating using the rapid thermal annealer system.

REFERENCES:
patent: 5228114 (1993-07-01), Suzuki
patent: 5551985 (1996-09-01), Brors

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