Static information storage and retrieval – Floating gate – Multiple values
Reexamination Certificate
2006-12-28
2010-10-05
Le, Vu A (Department: 2824)
Static information storage and retrieval
Floating gate
Multiple values
C365S185240
Reexamination Certificate
active
07808818
ABSTRACT:
Secondary electron injection (SEI) is used for programming NVM cells having separate charge storage areas in an ONO layer, such as NROM cells. Various combinations of low wordline voltage (Vwl), negative substrate voltabe (Vb), and shallow and deep implants facilitate the process. Second bit problems may be controlled, and retention and punchthrough may be improved. Lower SEI programming current may result in relaxed constraints on bitine resistance, number of contacts required, and power supply requirements.
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Eitan Mehulal Law Group
Le Vu A
Saifun Semiconductors Ltd.
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