Secondary electron multiplication target

Details Secondary electron multiplication target Secondary electron multiplication target

1977-03-09

1978-12-26

Ives, P. C.

Electric lamp and discharge devices

Cathode ray tube

Image pickup tube

313399, 428323, 428320, H01J 3100, H01J 3126, H01J 3148, B32B 516

Patent

active

041318200

ABSTRACT:
A secondary electron multiplication target for a secondary electron conduction type which comprises a conductive support layer and a secondary electron emitting layer deposited on the support layer. This secondary electron emitting layer is a porous layer consisting of fine particles of a humidity proof substance having higher melting point and electric resistance than MgO, for example, MgF.sub.2. This porous layer consists mainly of primary particles each having an average particle size of scores of angstroms to five hundred angstroms.

REFERENCES:
patent: 2824247 (1958-02-01), Szegho et al.
patent: 3155859 (1964-11-01), Koert
patent: 3197662 (1965-07-01), Schneeberger
patent: 3534207 (1970-10-01), Blamoutier et al.
Deutschman, "A Calibration Model etc.", Pub. Astron. Soc. Pacific, V. 84, Feb. 1972, #497, pp. 123-126.

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