Second level phase lines for CCD line imager

Details Second level phase lines for CCD line imager Second level phase lines for CCD line imager

1977-01-03

1979-07-31

Larkins, William D.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

307221D, 357 30, 357 71, H01L 2704, H01L 2978, G11C 1928

Patent

active

041632397

ABSTRACT:
Disclosed is an improved charge coupled optical imager and method of fabrication which includes a multilayer metallization system for addressing respective rows of the imager and for applying multiphase clocks to the respective electrodes of the charge coupled devices. The imager requires only two clock sources and substantially reduces the required semiconductor surface area required for a resolution element. In a preferred embodiment, anodized aluminum is used as the insulation separating the first and second levels of metallization.

REFERENCES:
patent: RE27951 (1974-03-01), Teer et al.
patent: 3651349 (1972-03-01), Kahng et al.
patent: 3756924 (1973-09-01), Collins et al.
patent: 3795847 (1974-03-01), Engeler et al.
patent: 3858232 (1974-12-01), Boyle et al.

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