Active solid-state devices (e.g. – transistors – solid-state diode – Incoherent light emitter structure – With heterojunction
Patent
1993-06-28
1995-04-18
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Incoherent light emitter structure
With heterojunction
257 13, 257 94, 359328, 359329, 372 22, 372 45, H03F 700, H01L 29161
Patent
active
054081106
ABSTRACT:
Quasi-phase matched (QPM) second-harmonic (SH) generation in the reflection geometry is described. The SH intensity can be strongly enhanced by spatially modulating the optical properties of the nonlinear medium. This type of quasi-phase matching is demonstrated using an Al.sub.0.8 Ga.sub.0.2 As/GaAs heterostructure designed for .lambda.=1.06 .mu.m incident light. The SH light intensity generated in reflection from the heterostructure is enhanced 70 times relative to the SH response of a homogeneous GaAs wafer. A Fabry-Perot resonant cavity design employs this structure to make thin films with extremely high SH generation efficiencies. This is of particular interest used in vertical cavity surface emitting lasers (VCSELs).
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patent: 5051617 (1991-09-01), Normandin et al.
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patent: 5202897 (1993-04-01), Whitehead
patent: 5233620 (1993-08-01), Shinozaki et al.
Normandin et al., "Enhanced Surface Emitting Waveguides for Visible, Monolithic Semiconductor Laser Sources", Electron Lett., vol. 26, 1990, pp. 2088-2089.
Chatenoud Francoise
Dai Hongxing
Dion Michel
Fernando Chan
Janz Siegfried
Hille Rolf
National Research Council of Canada
Saadat Mahshid
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