Second gallium nitride layers that extend into trenches in...

Details Second gallium nitride layers that extend into trenches in... Second gallium nitride layers that extend into trenches in...

2005-05-24

2005-05-24

Blum, David S. (Department: 2813)

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

Diamond or silicon carbide

C257S086000

Reexamination Certificate

active

06897483

ABSTRACT:
A gallium nitride layer is laterally grown into a trench in the gallium nitride layer, to thereby form a lateral gallium nitride semiconductor layer. At least one microelectronic device may then be formed in the lateral gallium nitride semiconductor layer. Dislocation defects do not significantly propagate laterally into the lateral gallium nitride semiconductor layer, so that the lateral gallium nitride semiconductor layer is relatively defect free.

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