Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Grooved and refilled with deposited dielectric material
Reexamination Certificate
2007-07-03
2007-07-03
Kebede, Brook (Department: 2823)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Grooved and refilled with deposited dielectric material
C438S438000, C257SE21547
Reexamination Certificate
active
11161074
ABSTRACT:
A seamless trench fill method utilizing ozone-assisted sub-atmospheric pressure chemical vapor deposition (SACVD) technique is provided. After the deposition of a SACVD silicon oxide film, the substrate is subjected to a steam anneal that is performed under H2/O2environment at a relatively lower temperature ranging between 500° C. and 800° C. for a time period of no less than 30 minutes. The seam defect in the trench is effectively eliminated by this low-temperature steam anneal. To densify the SACVD silicon oxide film, a subsequent N2anneal is carried out at a higher temperature, for example, 1050° C.
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Chen Neng-Kuo
Hsu Shao-Ta
Tsai Teng-Chun
Hsu Winston
Kebede Brook
Parker John M
United Microelectronics Corp.
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