Sealing technique for semiconductor devices

Details Sealing technique for semiconductor devices Sealing technique for semiconductor devices

1980-11-17

1982-08-31

Fisher, Richard V.

Glass manufacturing

Processes

Operating under inert or reducing conditions

65 43, 65 595, C03C 2704

Patent

active

043470742

ABSTRACT:
A sealing technique is disclosed by which the firing voltage of atmospheric discharge is increased by a pressurizing procedure such that the internal pressure of a sealing chamber is held at room temperature above half (0.5) of the atmospheric pressure even after the completion of sealing. Preferably, the pressurizing procedure is accomplished by a partial modification in the existing sealing facilities (for example, belt furnaces and low temperature furnaces). In another aspect of the invention, the method for sealing a semiconductor device minimizes water in the chamber after sealing by suppressing water expelled from glass frit during sealing or allowing the glass frit to absorb the water expelled therefrom. In other words, sealing is performed first under nitrogen gas atmosphere and then under oxygen gas atmosphere.

REFERENCES:
patent: 2515706 (1950-07-01), Greiner et al.
patent: 3123470 (1964-03-01), Denison, Jr.
patent: 4049416 (1977-09-01), Bloem
patent: 4184189 (1980-01-01), Davis et al.

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