Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating
Reexamination Certificate
2006-09-05
2008-11-25
Ngo, Ngan (Department: 2893)
Active solid-state devices (e.g., transistors, solid-state diode
With means to control surface effects
Insulating coating
C257S751000, C257S761000, C257SE21024, C257SE27117
Reexamination Certificate
active
07456490
ABSTRACT:
A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the sealant chain reacts with a second chain, that has at least oxygen and is present in the porous dielectric defining the pores, to form a continuous layer over the surface of the porous dielectric.
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Kloster Grant
Morrow Xiaorong
Wu Chih-I
Blakely , Sokoloff, Taylor & Zafman LLP
Intel Corporation
Ngo Ngan
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