Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-10-17
2006-10-17
Ahmed, Shamim (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S693000, C438S723000, C438S780000, C216S046000, C216S079000
Reexamination Certificate
active
07122481
ABSTRACT:
A method and structure for sealing porous dielectrics using silane coupling reagents is herein described. A sealant chain (silane coupling reagent) is formed from at least silicon, carbon, oxygen, and hydrogen and exposed to a porous dielectric material, wherein the sealant chain reacts with a second chain, that has at least oxygen and is present in the porous dielectric defining the pores, to form a continuous layer over the surface of the porous dielectric.
REFERENCES:
patent: 6054379 (2000-04-01), Yau et al.
patent: 6451436 (2002-09-01), Komatsu et al.
patent: 6528409 (2003-03-01), Lopatin et al.
patent: 6537896 (2003-03-01), Catabay et al.
patent: 6596467 (2003-07-01), Gallagher et al.
patent: 2004/0013858 (2004-01-01), Hacker et al.
patent: 2004/0072436 (2004-04-01), RamachandraRao et al.
patent: 2004/0214427 (2004-10-01), Kloster et al.
Kloster Grant
Morrow Xiaorong
Wu Chih-I
Ahmed Shamim
Blakely , Sokoloff, Taylor & Zafman LLP
Chen Eric B.
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