Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material
Reexamination Certificate
2006-07-18
2006-07-18
Tran, Mai-Huong (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Organic semiconductor material
C398S121000, C398S124000, C398S125000, C398S128000, C398S132000
Reexamination Certificate
active
07078726
ABSTRACT:
In one embodiment of the invention, a first absorbing layer is on a substrate and/or a second absorbing layer is on a heat-activated adhesive. If the IR source that supplies IR radiation is present on the substrate-side, then the absorption percentage of the substrate is less than the absorption percentage of the first absorbing layer if present and less than the absorption percentage of the second absorbing layer if present. If the IR source that supplies IR radiation is present on the “encapsulation cover”-side, then the absorption percentage of the encapsulation cover is less than the absorption percentage of the first absorbing layer if present and less than an absorption percentage of the second absorbing layer if present. The substrate and the encapsulation cover have a low thermal conductivity.
REFERENCES:
patent: 5874804 (1999-02-01), Rogers
patent: 6952530 (2005-10-01), Helvajian et al.
Frischknecht Kyle D.
Pichler Karl
Osram Opto Semiconductors GmbH
Tran Mai-Huong
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