Sealed semiconductor device including opposed substrates and met

Details Sealed semiconductor device including opposed substrates and met Sealed semiconductor device including opposed substrates and met

1997-01-31

1999-02-09

Whitehead Jr., Carl W.

Active solid-state devices (e.g., transistors, solid-state diode

Combined with electrical contact or lead

Chip mounted on chip

257275, 257704, 257710, 257778, 257659, 257660, 257728, 333247, H01L 2348, H01L 2352

Patent

active

058699031

ABSTRACT:
A semiconductor device includes a circuit substrate having a first surface on which a high-frequency circuit is located; a first metal layer disposed on a second surface of the circuit substrate; bump wirings on the first surface of the circuit substrate and electrically connected to the high-frequency circuit; a metal wall disposed on the first surface of the circuit substrate surrounding the high-frequency circuit; a wiring substrate having one surface on which substrate wirings corresponding to the bump wirings are located, the wiring substrate being disposed on the circuit substrate so that the substrate wirings are electrically connected to the bump wirings, and in contact with the metal wall, sealing a region including the high-frequency circuit; and a second metal layer disposed on a second surface of the wiring substrate. An electromagnetic shielding effect sufficient for use in a high-frequency circuit is obtained and fabricating cost is considerably reduced.

REFERENCES:
patent: 5117068 (1992-05-01), Seieroe et al.
patent: 5175611 (1992-12-01), Richardson et al.
patent: 5408121 (1995-04-01), Nakamura et al.
patent: 5451818 (1995-09-01), Chan et al.
patent: 5646445 (1997-07-01), Masumoto et al.

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