Seal ring structure for radio frequency integrated circuits

Active solid-state devices (e.g. – transistors – solid-state diode – With shielding – With means to shield device contained in housing or package...

Reexamination Certificate

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C257S659000, C438S064000

Reexamination Certificate

active

06967392

ABSTRACT:
Described is a method wherein a seal ring is formed by patterning multiple layers each comprised of a dielectric layer with conductive vias covered by a conductive layer. Discontinuities are made in the seal ring encapsulating an integrated circuit. There are no overlaps between different sections of the seal ring thereby reducing coupling of high frequency circuits in the seal ring structures. In addition, the distance between signal pads, circuits and the seal ring are enlarged. Electrical connection is made between deep N-wells and the seal ring. This encapsulates the integrated circuit substrate and reduces signal coupling with the substrate.

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