Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2008-03-05
2009-10-13
Blum, David S (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257SE23002
Reexamination Certificate
active
07602065
ABSTRACT:
A semiconductor device includes a first circuit, a first seal ring and at least one first notch. The first seal ring surrounds the first circuit. The first notch cuts the first seal ring. Specifically, the first notch includes an inner opening, an outer opening and a connecting groove. The inner opening is located on the inner side of the first seal ring. The outer opening is located on the outer side of the first seal ring. The outer opening and the inner opening are not aligned. The connecting groove connects the inner opening and the outer opening.
REFERENCES:
patent: 2004/0069227 (2004-04-01), Ku et al.
patent: 2006/0267155 (2006-11-01), Ohsumi
patent: 2009/0014867 (2009-01-01), Krawiec
Chen Chun-Hung
Hou Shang-Yun
Jeng Shin-Puu
Niu Pao-Kang
Tsai Chia-Lun
Blum David S
Taiwan Semiconductor Manufacturing Co. Ltd.
Thomas Kayden Horstemeyer & Risley
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