Scribe street width reduction by deep trench and shallow saw...

Details Scribe street width reduction by deep trench and shallow saw... Scribe street width reduction by deep trench and shallow saw...

2005-05-10

2005-05-10

Thompson, Craig A. (Department: 2813)

Semiconductor device manufacturing: process

Semiconductor substrate dicing

C438S033000, C438S068000, C438S113000, C438S458000

Reexamination Certificate

active

06890836

ABSTRACT:
In a method to singulate a semiconductor wafer (100) into chips, trench streets (107) of predetermined depth (105a) are formed across the first, active wafer surface (102) to define the outline of the chips (101). Thereafter, the fabrication of the active first wafer surface is completed and protected. Then, the wafer is flipped to expose the second wafer surface (103), and the wafer is subjected to a cutting saw. The saw is aligned with the trenches in the first surface so that the saw cuts the second surface along streets (106), which extend the trenches through the wafer. The saw is stopped cutting at a depth (105b), when the saw streets just coalesce with the trench streets, respectively, whereby the chips are completely singulated.

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