Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With peripheral feature due to separation of smaller...
Reexamination Certificate
2011-06-28
2011-06-28
Lee, Eugene (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With peripheral feature due to separation of smaller...
C257SE21523, C257SE21532, C438S460000, C438S462000
Reexamination Certificate
active
07968974
ABSTRACT:
A feedthrough in an IC scribe seal is disclosed. The feedthrough is structured to maintain isolation of components in the IC from mechanical damage and chemical impurities introduced during fabrication and assembly operations. A conductive structure penetrates the scribe seal, possibly in more than one location, connecting an interior region to an exterior region. A feedthrough vertical seal surrounds the conductive element in the IC and connects to the scribe seal. A horizontal diffusion barrier connects to the scribe seal and the feedthrough vertical seal. The feedthrough vertical seal, the horizontal diffusion barrier and the IC substrate form a continuous barrier to chemical impurities around the conductive element in the interior region. The conductive structure includes any combination of a doped region in an active area, an MOS transistor gate layer, and one or more interconnect metal layers. The feedthrough is compatible with aluminum and copper interconnect metallization.
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Bonifield Thomas D.
Summerfelt Scott R.
Brady III Wade J.
Gumedzoe Peniel M
Keagy Rose Alyssa
Lee Eugene
Telecky , Jr. Frederick J.
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