Screening of gate oxides on semiconductors

Details Screening of gate oxides on semiconductors Screening of gate oxides on semiconductors

1988-03-14

1989-08-22

Larkins, William D.

357 2314, 357 71, 357 85, H01L 2704, H01L 2978

Patent

active

048600792

ABSTRACT:
Testing of the gate oxides of all the transistors of a single die in a silicon wafer to be diced into a plurality of dice in a single operation is effected at an intermediate stage of the fabrication process by providing a metal layer contacting selectively each of the gate electrodes of a die at an intermediate stage of the processing and providing between the layer and the wafer a voltage of amplitude insufficient to cause significant tunneling current through good gate oxides but sufficient to cause significant tunneling current through defective gate oxides.

REFERENCES:
patent: 3750268 (1973-08-01), Wang
patent: 3851245 (1974-11-01), Baker et al.
patent: 3889188 (1975-06-01), Trindade
patent: 4224733 (1980-09-01), Spadea
patent: 4296372 (1981-10-01), Feverbaum
patent: 4542340 (1985-09-01), Chakravarti et al.
Hoffman et al., IEEE J. of Solid State Circuits, vol. SC8, No. 5, Oct. 1973, pp. 298-305.

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