Screening of gate oxides on semiconductors

Details Screening of gate oxides on semiconductors Screening of gate oxides on semiconductors

1987-05-29

1988-07-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437227, 324158T, H01L 2166

Patent

active

047600322

ABSTRACT:
Testing of the gate oxides of all the transistors of a single die in a silicon wafer to be diced into a plurality of dice in a single operation is effected at an intermediate stage of the fabrication process by providing a metal layer contacting selectively each of the gate electrodes of a die at an intermediate stage of the processing and providing between the layer and the wafer a voltage of amplitude insufficient to cause significant tunneling current through good gate oxides but sufficient to cause significant tunneling current through defective gate oxides.

REFERENCES:
patent: 3750268 (1973-08-01), Wang
patent: 3851245 (1974-11-01), Baker et al.
patent: 3889188 (1975-06-01), Trindade
patent: 4224733 (1980-09-01), Spadea
patent: 4296372 (1981-10-01), Feuerbaum
patent: 4542340 (1985-09-01), Chakravarti et al.

Affiliated with

Also associated with

Rating

Screening of gate oxides on semiconductors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Screening of gate oxides on semiconductors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Screening of gate oxides on semiconductors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-257832