SCR controlled by the power bias

Details SCR controlled by the power bias SCR controlled by the power bias

2007-08-28

2010-11-16

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

C257S175000, C257S355000

Reexamination Certificate

active

07834378

ABSTRACT:
A composite dual SCR circuit that acts to protect the Vcc node as well as an I/O node or pin. The dual SCR uses the Vcc to control or program the triggering point of the SCR connected to an I/O node. When Vcc is low, the SCR protecting an I/O node triggers a few volts above ground, but when Vcc is high the trigger point of the SCR protecting the I/O node is much higher. The dual SCR incorporates added diffusions to an existing first SCR structure between the power node and the ground node thereby forming a second SCR. The first and second SCRs share a common cathode transistor. In one illustrative embodiment, only one SCR is constructed incorporating the Vcc to control the triggering of the SCR.

REFERENCES:
patent: 5576557 (1996-11-01), Ker
patent: 5610425 (1997-03-01), Quigley
patent: 5663860 (1997-09-01), Swonger
patent: 5671111 (1997-09-01), Chen
patent: 5754381 (1998-05-01), Ker
patent: 5905288 (1999-05-01), Ker
patent: 6147369 (2000-11-01), Chen et al.
patent: 6246079 (2001-06-01), Chen
patent: 6353237 (2002-03-01), Yu
patent: 6661060 (2003-12-01), Lee et al.
patent: 6844595 (2005-01-01), Fan-Chen
patent: 7719026 (2010-05-01), Lou et al.

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