Schottky with thick trench bottom and termination oxide and...

Details Schottky with thick trench bottom and termination oxide and... Schottky with thick trench bottom and termination oxide and...

2005-12-20

2005-12-20

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Forming schottky junction

C438S571000, C257S471000, C257S594000

Reexamination Certificate

active

06977208

ABSTRACT:
A trench schottky diode which includes a thin insulation layer on the sidewalls of its trenches and a relatively thicker insulation layer at the bottoms of its trenches.

REFERENCES:
patent: 4941026 (1990-07-01), Temple
patent: 6441454 (2002-08-01), Hijzen et al.
patent: 6707127 (2004-03-01), Hshieh et al.
patent: 2005/0062124 (2005-03-01), Chiola
patent: 2005/0127465 (2005-06-01), Chiola

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