Schottky semiconductor device

Details Schottky semiconductor device Schottky semiconductor device

1976-04-13

1977-07-05

Wojciechowicz, Edward J.

357 56, 357 71, 357 61, H01L 2948, H01L 2906, H01L 29161, H01L 2348

Patent

active

040343944

ABSTRACT:
A Schottky semiconductor device includes a gallium arsenide substrate, a first metal layer formed of niobium, tantalum or vanadium to define a Schottky junction with the substrate, a second metal layer of platinum or palladium formed on the first metal layer and a third metal layer superposed on said second metal layer.

REFERENCES:
patent: 3616380 (1971-10-01), Lepselter
patent: 3636417 (1972-01-01), Kimura
patent: 3886580 (1975-05-01), Calviello

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