Schottky photodiode with silicide layer

Details Schottky photodiode with silicide layer Schottky photodiode with silicide layer

1989-06-21

1991-01-01

Mintel, William

357 30, 357 67, 357 58, 357 32, H01L 2948

Patent

active

049822462

ABSTRACT:
A Schottky photodiode formed by the method including the steps of: forming a base electrode on the principal substrate surface; depositing a layer of N+ amorphous silicon on the base electrode; depositing a layer of intrinsic silicon on the N+ amorphous silicon layer; depositing a Schottky contact on the intrinsic silicon layer; and selectively patterning the Schottky contact and the two silicon layers with the same photoresist mask to form a Schottky photodiode island.

REFERENCES:
patent: 4163677 (1979-08-01), Carlson et al.
patent: 4532373 (1985-07-01), Matsuura et al.
patent: 4543442 (1985-09-01), Alcorn et al.
Li, "A Proposed Novel MPN GaAs Schottky Barrier Solar Cell", Japanese Journal of Applied Physics, vol. 17 (1978), Supplement 17-1, pp. 291-294.
Wu et al., "Nb/GaAs and NbN/GaAs Schottky Barriers", Appl. Phys. Lett., 50(5), Feb. 2, 1987, pp. 287-289.
Murarka, "Refractory Silicides for Integrated Circuits", J. Vac. Sci. Technol., 17(4), Jul./Aug. 1980, pp. 775-791.

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