Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device – Heterojunction formed between semiconductor materials which...
Reexamination Certificate
2006-01-17
2006-01-17
Tran, Michael (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
Heterojunction formed between semiconductor materials which...
C257S318000, C257S471000, C257S321000
Reexamination Certificate
active
06987292
ABSTRACT:
Various methods for forming semiconductor devices are provided that include the step of implanting dopants into the devices to achieve doping concentrations that allow complementary n- and p-channel SJT behavior with devices of substantially equal gate length and gate width. Moreover, complementary SJT devices are provided that include n- and p-channel devices that have approximately equal gate lengths and widths. SJT devices may be appropriately doped and configured such that input current and the output current both vary substantially exponentially with a gate-source voltage in the sub-threshold mode, and such that the drain current varies substantially linearly with the gate current through a substantially constant current gain that is given by a ratio of the drain current to the gate current.
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Arizona State University
Atkins Robert D.
Le Thao P.
Quarles & Brady Streich & Lang LLP
Tran Michael
LandOfFree
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