Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2006-03-22
2010-06-08
Toledo, Fernando L (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C257S371000, C257SE29265, C257SE21053, C257S472000
Reexamination Certificate
active
07732887
ABSTRACT:
A Schottky junction diode device having improved performance is fabricated in a conventional CMOS process. A substrate including a material doped to a first conductivity type is formed. A first well is disposed over the substrate. The first well includes a material doped to a second conductivity type opposite that of the first conductivity type. A region of metal-containing material is disposed over the first well to form a Schottky junction at an interface between the region of metal-containing material and the first well. In one embodiment, a first well contact is disposed in a portion of the first well. A second well is disposed over the substrate wherein the second well includes a material doped to the first conductivity type. In one embodiment, the first well and the second well are not in direct contact with one another.
REFERENCES:
patent: 5962893 (1999-10-01), Omura et al.
patent: 7202536 (2007-04-01), Williams et al.
patent: 2004/0012066 (2004-01-01), Dietl et al.
patent: 2006/0125040 (2006-06-01), Levin et al.
patent: 2006/0223246 (2006-10-01), Ma et al.
Office Action for U.S. Appl. No. 11/387,515 mailed Sep. 17, 2008.
Office Action for U.S. Appl. No. 11/387,515 mailed Jun. 11, 2009.
Humes Todd E.
Ma Yanjun
Mavoori Jaideep
Oliver Ronald A.
Diallo Mamadou
Nixon & Peabody LLP
Ritchie David B.
Toledo Fernando L
Virage Logic Corporation
LandOfFree
Schottky junction diode devices in CMOS does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Schottky junction diode devices in CMOS, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky junction diode devices in CMOS will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4172565