Schottky junction device having a Schottky junction of a semicon

Details Schottky junction device having a Schottky junction of a semicon Schottky junction device having a Schottky junction of a semicon

1995-05-15

1996-11-05

Saadat, Mahshid

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 15, 257185, 257191, 257472, 257473, H01L 2906, H01L 310328, H01L 27095

Patent

active

055720439

ABSTRACT:
To provide a Schottky junction device having a super-lattice arranged in the Schottky interface in order to secure a high Schottky barrier and at the same time showing a high speed response by resolving the phenomenon of piled-up holes at the upper edge of the valence band, while maintaining the height of the Schottky barrier. A Schottky junction device having a Schottky junction of a semiconductor and a metal and a superlattice on the interface of the semiconductor and the metal, wherein the upper edge of the valence band of said superlattice is varied to show a turn to a specific direction. The phenomenon of hole-piling up at the upper end of the valence band is resolved while maintaining the height of the Schottky barrier and consequently such a Schottky junction device shows an excellent high speed response.

REFERENCES:
patent: 4616241 (1986-10-01), Biefeld et al.
patent: 5115294 (1992-05-01), Sudbo et al.
Electronics Letters, vol. 14, No. 23, 1978.
IEEE Electron Device Letters, vol. Edl.1, No. 9, 1980.
Appl. Phys. Lett. 54(19), 1989.
Appl. Phys. Lett. 55(18), 1989.

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