Schottky-gate field effect transistor and method for producing t

Details Schottky-gate field effect transistor and method for producing t Schottky-gate field effect transistor and method for producing t

1986-03-26

1988-09-27

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437175, 156643, 357 22, H01L 2980

Patent

active

047742003

ABSTRACT:
A Schottky-gate field effect transistor comprises a substrate, an active layer formed in one surface of the substrate, a Schottky gate electrode in the form of an inverted trapezoid on the active layer. A heavily doped region is formed in the one surface of the substrate at each side of the inverted trapezoid Schottky gate electrode separately from the side edge of the bottom of the Schottky gate electrode by a certain distance but in self-alignment with the corresponding side edge of the top of the inverted trapezoid Schottky gate electrode. Source and drain electrodes are respectively formed on the heavily doped regions in ohmic contact thereto in such a manner that the edge of each of the source and drain electrodes close to Schottky gate electrode is in alignment with the corresponding side edge of the top of the inverted-trapezoid gate electrode.

REFERENCES:
patent: 4099305 (1978-07-01), Cho et al.
patent: 4171234 (1979-10-01), Nagata et al.
patent: 4309267 (1982-01-01), Boyd et al.
patent: 4325181 (1982-04-01), Yoder
patent: 4379005 (1983-04-01), Hovel et al.
patent: 4404732 (1983-09-01), Andrade
patent: 4559238 (1985-12-01), Bujatti et al.
patent: 4640003 (1987-02-01), Papanicolaou
Yokoyama et al., Digest of Technical Papers, IEEE Inter'l Solid State Circuits Conf., 1981, pp. 218-219.
Yamasaki et al., Electronics Letters, vol. 18, pp. 119-121 (1982).

Affiliated with

Also associated with

Rating

Schottky-gate field effect transistor and method for producing t does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky-gate field effect transistor and method for producing t, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky-gate field effect transistor and method for producing t will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2397825