Schottky-gate field-effect transistor and fabrication process th

Details Schottky-gate field-effect transistor and fabrication process th Schottky-gate field-effect transistor and fabrication process th

1979-03-15

1981-01-13

Tupman, W. C.

Metal working

Method of mechanical manufacture

Assembling or joining

29576B, 29578, 29590, B01J 1700

Patent

active

042440971

ABSTRACT:
The specification describes a Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no postimplantation annealing.

REFERENCES:
patent: 3700978 (1972-10-01), North
patent: 3912546 (1975-10-01), Hunsperger

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