Schottky-gate field-effect transistor and fabrication process th

Details Schottky-gate field-effect transistor and fabrication process th Schottky-gate field-effect transistor and fabrication process th

1977-11-14

1979-07-10

Wojciechowicz, Edward J.

357 15, 357 55, 357 68, 357 91, H01L 2980

Patent

active

041609840

ABSTRACT:
The specification describes a Schottky-gate field-effect transistor and related fabrication process wherein thin ion implanted surface stabilization regions are formed between source and gate electrodes and gate and drain electrodes of the device and to a thickness of between 100 and 1,000 angstroms. This is accomplished utilizing the source, gate and drain electrodes as an ion implantation mask against impinging inert ions which render the implanted regions semi-insulating, and this process requires no post-implantation annealing.

REFERENCES:
patent: 3700978 (1972-10-01), North et al.
patent: 3912546 (1975-10-01), Aunsperger et al.
patent: 4015278 (1977-03-01), Fukuta

Affiliated with

Also associated with

Rating

Schottky-gate field-effect transistor and fabrication process th does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky-gate field-effect transistor and fabrication process th, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky-gate field-effect transistor and fabrication process th will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-740729