Schottky gate field effect transistor

Details Schottky gate field effect transistor Schottky gate field effect transistor

1994-06-28

1996-08-20

Fahmy, Wael M.

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257284, H01L 310328, H01L 310336, H01L 2980

Patent

active

055481396

ABSTRACT:
The invention provides a semiconductor multi-layer structure involved in a Schottky gate field effect transistor. The structure comprises a Schottky barrier structure to form a Schottky contact permitting the third conduction band edge to have such a sufficient large discontinuity as to prevent carriers to pass through the Schottky barrier layer, while the Schottky barrier structure includes a quantum well or super-lattice structure to permit carriers to exhibit a tunneling at a high probability between the quantum well layer and a cap layer doped at a sufficient high impurity concentration for permitting the fourth compound semiconductor to be in a degenerate state.

REFERENCES:
patent: 5343057 (1994-08-01), Gerard et al.
By U. Mishra et al., "Microwave Performance of AlInAs-GaInAs HEMT's with 0.2-- and 0.1--.mu.m Gate Length", IEEE Electron Device Letters, Dec. 1988, vol. 9, No. 12, pp. 647-649.

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