Schottky gate field effect transistor

Details Schottky gate field effect transistor Schottky gate field effect transistor

1975-03-28

1976-12-14

Wojciechowicz, Edward J.

357 4, 357 15, 357 23, 357 49, 357 42, H01L 2980, H01L 2948, H01L 2712, H01L 2702

Patent

active

039979083

ABSTRACT:
A Schottky gate field effect transistor of the type comprising a silicon body of one conductivity type on an insulator substrate, and source, drain and gate electrodes is provided with a pn-junction located parallel to the surface of the substrate which produces a space charge zone occupying the zones of the silicon body close to the substrate surface, and a relatively thin active layer is located between the space charge zone and the gate electrode, the active layer having the same type conductivity as the silicon body.

REFERENCES:
patent: 3783052 (1974-01-01), Fisher
patent: 3890632 (1975-06-01), Ham et al.

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