Schottky gate field effect transistor

Details Schottky gate field effect transistor Schottky gate field effect transistor

1988-10-04

1990-02-27

James, Andrew J.

357 232, 357 64, 357 91, H01L 2980

Patent

active

049050613

ABSTRACT:
In a Schottky gate field effect transistor comprising a channel formed by doping donor ions in the surface layer of a compound semiconductor (e.g., GaAs) substrate and performing heat treatment, a Schottky gate electrode formed over the channel, and a source electrode and a drain electrode formed on the respective sides of the Schottky gate electrode, a first and a second regions are formed by implantation of ions which are to become carrier killers, to have respective concentration peaks shallower and deeper than the concentration peak of the donor ions of the channel.

REFERENCES:
patent: 3700978 (1972-10-01), North
patent: 4193079 (1980-03-01), Yeh
patent: 4306916 (1981-12-01), Wollesen et al.
patent: 4469528 (1984-09-01), Berth et al.
patent: 4601095 (1986-07-01), Kikuchi et al.
JP-Z Japanese Journal of Applied Physics, Asano et al., vol. 20, No. 5, May 1981, pp. 901-907.
GB-Z Solid-State Electronics, vol. 11, 1968, p. 601.
U.S.-Z IEEE Transactions on Electronic Devices, vol. ED-29, No. 5, May 1982, pp. 811-813.
U.S.-Z IEEE Electron Device Letters, vol. EDL-5, No. 4, Apr. 1984, pp. 126-128.
Extended Abstracts of the 16th (1984 Int.) Conf. on Solid State Devices and Material, Kobe, Nakamura et al., 1984, pp. 395-398.

Affiliated with

Also associated with

Rating

Schottky gate field effect transistor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky gate field effect transistor, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky gate field effect transistor will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-177168