Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier
Reexamination Certificate
2011-03-29
2011-03-29
Kebede, Brook (Department: 2894)
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
C438S092000, C438S570000, C257SE27040, C257SE29338, C257SE21368
Reexamination Certificate
active
07915703
ABSTRACT:
Fabrication of a Schottky diodes may include providing a Schottky contact layer containing a low barrier metal layer with spaced apart high barrier metal islands therein on a first surface of a substrate. A diode contact is formed on a second surface of the substrate that is opposite to the first surface. Formation of the Schottky contact layer may include providing a liquid mixture of a high barrier metal and a low barrier metal on the first surface of the substrate. Temperature and/or relative concentrations of the high and low barrier metals in the liquid mixture may be controlled to cause regions of the high barrier metal to solidify within the liquid mixture and agglomerate to form the spaced apart high barrier metal islands while inhibiting solidification of the low barrier metal. The temperature and relative concentrations may then be controlled to cause the low barrier metal to solidify and form the low barrier metal layer containing the high barrier metal islands.
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Yoshida et al., “Low On-Voltage Operation AIGaN/GaN Schottky Barrier Diode with a Dual Schottky Structure”, IEICE Transactions on Electronics, Electronics Society, Tokyo, Japan, XP-001228959, vol. E88-C, No. 4, Apr. 2005, pp. 690-693.
Henning Jason Patrick
Ward Allan
Cree Inc.
Kebede Brook
Myers Bigel Sibley & Sajovec P.A.
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