Schottky diode with voltage limiting guard band

Details Schottky diode with voltage limiting guard band Schottky diode with voltage limiting guard band

1977-11-25

1978-08-29

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 13, 357 40, 307317A, 307318, 307237, 361 56, 361 91, H01L 2948

Patent

active

041107756

ABSTRACT:
A metal-semiconductor diode which includes an integral voltage clamping guard band. The guard band is defined by a p-type region disposed in an n-type epitaxial layer which layer contacts the anode barrier metal. The guard band in addition to reducing edge leakage, limits the reverse voltage on the metal-semiconductor barrier to less than its avalanche breakdown voltage. This provides transient voltage protection for the diode.

REFERENCES:
patent: 4025802 (1977-05-01), Inoue et al.
M. Lepselter et al., "Silicon Schottky Barrier Diode with Near-Ideal I-V Characteristics," B.S.T.J., Feb. 1968, pp. 195-208.
H. Kalter, "Semiconductor Chip Pad Protect Device," IBM Tech. Discl. Bull., vol. 15, #12, May 1973, pp. 3753, 3754.

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