Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2008-07-15
2008-07-15
Pert, Evan (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S627000, C257S347000, C257S352000, C257S073000, C257S074000
Reexamination Certificate
active
11042533
ABSTRACT:
In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
REFERENCES:
patent: 4272754 (1981-06-01), Lou
patent: 4622515 (1986-11-01), Everson
patent: 4623426 (1986-11-01), Peters
patent: 4626322 (1986-12-01), Switzer
patent: 5162689 (1992-11-01), Fliegel et al.
patent: 5449923 (1995-09-01), Kuo et al.
patent: 6184564 (2001-02-01), Gould
patent: 6366389 (2002-04-01), Wraback et al.
patent: 6846731 (2005-01-01), Lu et al.
patent: 199 51 207 (2001-04-01), None
patent: 1 172 858 (2002-01-01), None
patent: 03241777 (1991-10-01), None
patent: WO00/59039 (2000-10-01), None
Emanetoglu, et al. Epitaxial Growth and Characterization of High Quality ZnO Films for Surface Acoustic Wave Applications. Proceedings of the 1997 IEEE Ultrasonics Symposium. Ontario, Canada, Oct. 5-8, 1997, IEEE Ultrasonics Symposium Proceedings, New York, NY: IEEE, US, vol. 1, Oct. 5, 1997, pp. 195-199.
Fabricius, et al. Ultraviolet detectors in thin sputtered ZnO films. Applied Optics, vol. 25, No. 16, Aug. 15, 1986, pp. 2764-2767.
Gorla et al. “Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01-12) sapphire by metalorganic chemical vapor deposition”, Journal of Applied Physics Letters, vol. 85, No. 5, Mar. 1, 1999, pp. 2595-2601.
Mead, C. A., “Surface Barriers on ZnSe and ZnO”, Physics Letters, vol. 18, No. 3, Sep. 1965.
Liang, et al. ZnO Schottky ultraviolet photodetectors. Journal of Crystal Growth 225, 2001, pp. 110-113.
Liu, et al. Ultraviolet Detectors Based on Epitaxial ZnO Films Grown by MOCVD. Journal of Electronic Materials, vol. 29, No. 1, 2000, pp. 69-74.
Neville, et al. Surface Barriers on Zinc Oxide. Journal of Applied Physics, vol. 41, No. 9, Aug. 1970, pp. 3795-3800.
Park et al., “Metalorganic vapor-phase epitaxial growth and photluminescent properties of Zn1−xMgxO (0<=X<=0.49) thin films”, Applied Physics Letters, vol. 79, n. 13, Abstract.
Sheng, et al. Schottky diode with Ag on (1120) epitaxial ZnO film. Applied Physics Letters, vol. 80, No. 12, Mar. 25, 2002, pp. 2132-2134.
Wraback et al., “High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on R-plane sapphire”, Applied Physics Letters, vol. 74, n. 4, Jan. 1999, Abstract.
Yang, et al. Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin films. Applied Physics Letters, vol. 78, No. 18, Apr. 30, 2001, pp. 2787-2789.
Zhang et al. “Structural and optical properties of ZnO films grown on R-A1203 substrates”, Applied Physics Letters, vol. 79 n. 24, Dec. 2001, Abstract.
Emanetoglu Nuri William
Liang Shaohua
Lu Yicheng
Muthukumar Sriram
Sheng Haifeng
Hoffmann & Baron , LLP
Rutgers, the State University of New Jersey
Tran Tan
LandOfFree
Schottky diode with silver layer contacting the ZnO and Mg x... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Schottky diode with silver layer contacting the ZnO and Mg x..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky diode with silver layer contacting the ZnO and Mg x... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3916209