Semiconductor device manufacturing: process – Forming schottky junction
Reexamination Certificate
2005-01-25
2005-01-25
Smith, Matthew (Department: 2825)
Semiconductor device manufacturing: process
Forming schottky junction
C438S575000, C438S580000, C438S583000, C257S449000, C257S455000, C257S475000, C257S485000
Reexamination Certificate
active
06846731
ABSTRACT:
In the present invention, there is provided semiconductor devices such as a Schottky UV photodetector fabricated on n-type ZnO and MgxZn1-xO epitaxial films. The ZnO and MgxZn1-xO films are grown on R-plane sapphire substrates and the Schottky diodes are fabricated on the ZnO and MgxZn1-xO films using silver and aluminum as Schottky and ohmic contact metals, respectively. The Schottky diodes have circular patterns, where the inner circle is the Schottky contact, and the outside ring is the ohmic contact. Ag Schottky contact patterns are fabricated using standard liftoff techniques, while the Al ohmic contact patterns are formed using wet chemical etching. These detectors show low frequency photoresponsivity, high speed photoresponse, lower leakage current and low noise performance as compared to their photoconductive counterparts. This invention is also applicable to optical modulators, Metal Semiconductor Field Effect Transistors (MESFETs) and more.
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Emanetoglu Nuri William
Lu Yicheng
Muthukumar Sriram
Sheng Haifeng
Zhong Jian
Hoffman & Baron LLP
Rocchegiani Renzo N.
Rutgers The State University of New Jersey
Smith Matthew
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