Schottky diode with minimal vertical current flow

Details Schottky diode with minimal vertical current flow Schottky diode with minimal vertical current flow

2008-06-17

2008-06-17

Ngo, Ngan (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Schottky barrier

With doping profile to adjust barrier height

C257S476000, C257S485000, C257SE29148, C257SE29338

Reexamination Certificate

active

07388271

ABSTRACT:
A method of forming a rectifying diode. The method comprises providing a first semiconductor region of a first conductivity type and having a first dopant concentration and forming a second semiconductor region in the first semiconductor region. The second semiconductor region has the first conductivity type and having a second dopant concentration greater than the first dopant concentration. The method also comprises forming a conductive contact to the first semiconductor region and forming a conductive contact to the second semiconductor region. The rectifying diode comprises a current path, and the path comprises: (i) the conductive contact to the first semiconductor region; (ii) the first semiconductor region; (iii) the second semiconductor region; and (iv) the conductive contact to the second semiconductor region. The second semiconductor region does not extend to a layer buried relative to the first semiconductor region.

REFERENCES:
patent: 4669180 (1987-06-01), Thomas et al.
patent: 2006/0065891 (2006-03-01), McCormack et al.
patent: 2006/0125039 (2006-06-01), Levin et al.
patent: 2006/0231875 (2006-10-01), Patrick et al.

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