Schottky diode with improved surge capability

Details Schottky diode with improved surge capability Schottky diode with improved surge capability

2006-07-05

2010-10-12

Dickey, Thomas L (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Housing or package

Insulating material

C257SE23037

Reexamination Certificate

active

07812441

ABSTRACT:
An SiC Schottky diode die or a Si Schottky diode die is mounted with its epitaxial anode surface connected to the best heat sink surface in the device package. This produces a substantial increase in the surge current capability of the device.

REFERENCES:
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patent: 6432750 (2002-08-01), Jeon et al.
patent: 6624522 (2003-09-01), Standing et al.
patent: 6791167 (2004-09-01), Hayashi et al.
patent: 2002/0109211 (2002-08-01), Shinohara
patent: 2003/0075783 (2003-04-01), Yoshihara et al.
patent: 2004/0063240 (2004-04-01), Madrid et al.
patent: 2004/0104489 (2004-06-01), Larking
patent: 2004/0169262 (2004-09-01), Oliver et al.
patent: 2006/0086939 (2006-04-01), Carta et al.
patent: 97/27626 (1997-07-01), None

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