Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – With means to prevent edge breakdown
Patent
1995-05-02
1996-07-23
Limanek, Robert P.
Active solid-state devices (e.g., transistors, solid-state diode
Schottky barrier
With means to prevent edge breakdown
257476, 257483, H01L 2947, H01L 3107
Patent
active
055392377
ABSTRACT:
A Schottky diode circuit 20 is formed on a semiconductor layer 24. A conductive contact 36 on the surface of the semiconductor layer 24 forms a Schottky barrier 40 at the junction of the conductive contact 36 and the semiconductor layer 24. A guard ring 26 in the semiconductor layer 24 is adjacent to the Schottky barrier 40 and is separated from the conductive contact 36 by a portion of the semiconductor layer 24. No direct electrical path exists between the guard ring 26 and the conductive contact 36.
REFERENCES:
patent: 4607270 (1986-08-01), Iesaka
patent: 4862244 (1989-08-01), Yamagishi
patent: 4874714 (1989-10-01), Eklund
Marshall Andrew
Soenen Eric G.
Todd James R.
Trogolo Joe R.
Donaldson Richard L.
Hardy David B.
Hiller William E.
Limanek Robert P.
Stewart Alan K.
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