Schottky diode with a vertical barrier

Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Having only two terminals and no control electrode – e.g.,...

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C257S453000, C257SE21064, C438S092000

Reexamination Certificate

active

07622752

ABSTRACT:
A Schottky diode with a vertical barrier extending perpendicularly to the surface of a semiconductor chip having a vertical central metal conductor in contact on the one hand with the substrate of the semiconductor chip with an interposed interface forming a Schottky barrier, and on the other hand with radially-extending conductive fingers.

REFERENCES:
patent: 3977910 (1976-08-01), Anthony et al.
patent: 4377423 (1983-03-01), Anthony
patent: 4482907 (1984-11-01), Jay et al.
patent: 4721986 (1988-01-01), Kinzer
patent: 4724223 (1988-02-01), Ditchek
patent: 4984037 (1991-01-01), Ditchek et al.
patent: 5040034 (1991-08-01), Murakami et al.
patent: 5285090 (1994-02-01), Ditchek et al.
patent: 5471072 (1995-11-01), Papanicolaou
patent: 6078090 (2000-06-01), Williams et al.
patent: 6586801 (2003-07-01), Onishi et al.
patent: 6593620 (2003-07-01), Hshieh et al.
patent: 6821824 (2004-11-01), Minato et al.
patent: 7002205 (2006-02-01), Onishi et al.
patent: 7166867 (2007-01-01), Beach et al.
patent: 2005/0121691 (2005-06-01), Morand
patent: 2005/0121732 (2005-06-01), Morand
patent: 2005/0127434 (2005-06-01), Quoirin et al.
patent: 0 271 346 (1988-06-01), None
patent: WO 03/096433 (2003-11-01), None
French Search Report from French Patent Application No. 04/53183, filed Dec. 23, 2004.
Kumar M.J. et al. “A New, High-Voltage 4H-SIC Lateral Dual Sidewall Schottky (LDSS) Rectifier: Theoretical Invetigation and Analysis” IEEE# Transactions on Electron Devices, IEEE Inc. New York, US, vol. 50, No. 7, Jul. 2003 pp. 1690-1693, XP001168267 ISSN: 0018-9383.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Schottky diode with a vertical barrier does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Schottky diode with a vertical barrier, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Schottky diode with a vertical barrier will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-4086309

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.