Schottky diode using charge balance structure

Active solid-state devices (e.g. – transistors – solid-state diode – Schottky barrier – In integrated structure

Reexamination Certificate

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C257S594000

Reexamination Certificate

active

07061066

ABSTRACT:
In accordance with an embodiment of the invention, a Schottky diode includes a metal layer in contact with a semiconductor region to form a Schottky barrier therebetween. A first trench extends in the semiconductor region. The first trench includes at least one electrode or diode therein.

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